SCTL35N65G2V STMicroelectronics
Виробник: STMicroelectronics
Description: TRANS SJT N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
| Кількість | Ціна |
|---|---|
| 3000+ | 566.24 грн |
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Технічний опис SCTL35N65G2V STMicroelectronics
Description: TRANS SJT N-CH 650V PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V.
Інші пропозиції SCTL35N65G2V за ціною від 582.46 грн до 1198.95 грн
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SCTL35N65G2V | Виробник : STMicroelectronics |
Description: TRANS SJT N-CH 650V PWRFLAT HV Packaging: Cut Tape (CT) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PowerFlat™ (8x8) HV Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V |
на замовлення 5655 шт: термін постачання 21-31 дні (днів) |
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SCTL35N65G2V | Виробник : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac |
на замовлення 2311 шт: термін постачання 21-30 дні (днів) |
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| SCTL35N65G2V | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 417W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 160A Power dissipation: 417W Case: PowerFLAT 8x8 Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |