SCTW35N65G2VAG STMicroelectronics
Виробник: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 2
| Кількість | Ціна |
|---|---|
| 1+ | 835.91 грн |
| 10+ | 614.77 грн |
| 100+ | 510.19 грн |
| 600+ | 466.97 грн |
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Технічний опис SCTW35N65G2VAG STMicroelectronics
Description: SICFET N-CH 650V 45A HIP247, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Part Status: Active, Supplier Device Package: HiP247™, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SCTW35N65G2VAG
| Фото | Назва | Виробник | Інформація |
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SCTW35N65G2VAG | Виробник : STMicroelectronics |
Description: SICFET N-CH 650V 45A HIP247 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Part Status: Active Supplier Device Package: HiP247™ Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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