SCTW40N120G2VAG STMicroelectronics
Виробник: STMicroelectronics
Description: SICFET N-CH 1200V 33A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: HiP247™
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1+ | 1242.01 грн |
| 30+ | 741.72 грн |
| 120+ | 642.25 грн |
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Технічний опис SCTW40N120G2VAG STMicroelectronics
Description: SICFET N-CH 1200V 33A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: HiP247™, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції SCTW40N120G2VAG за ціною від 639.13 грн до 1287.20 грн
| Фото | Назва | Виробник | Інформація |
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SCTW40N120G2VAG | Виробник : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H |
на замовлення 551 шт: термін постачання 21-30 дні (днів) |
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| SCTW40N120G2VAG | Виробник : STM |
AUTOMOTIVE-GRADE SILICON CARBIDE Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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| SCTW40N120G2VAG | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 290W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.195Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |