Технічний опис SCTWA35N65G2V STMicroelectronics
Description: TRANS SJT N-CH 650V 45A TO247, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 3.2V @ 1mA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V, Drain to Source Voltage (Vdss): 650 V.
Інші пропозиції SCTWA35N65G2V за ціною від 411.73 грн до 906.42 грн
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SCTWA35N65G2V | Виробник : STMicroelectronics |
 Description: TRANS SJT N-CH 650V 45A TO247Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Supplier Device Package: TO-247 Long Leads Vgs(th) (Max) @ Id: 3.2V @ 1mA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V Drain to Source Voltage (Vdss): 650 V |
на замовлення 575 шт: термін постачання 21-31 дні (днів) |
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