Технічний опис SCTWA40N120G2V-4 STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V, Power Dissipation (Max): 277W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 1mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V.
Інші пропозиції SCTWA40N120G2V-4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SCTWA40N120G2V-4 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH SiC 1.2KV 36A 4-Pin(4+Tab) HIP-247 Tube |
товару немає в наявності |
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| SCTWA40N120G2V-4 | Виробник : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 36A 4-Pin(4+Tab) HIP-247 Tube |
товару немає в наявності |
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| SCTWA40N120G2V-4 | Виробник : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 1mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V |
товару немає в наявності |
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SCTWA40N120G2V-4 | Виробник : STMicroelectronics | SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package |
товару немає в наявності |
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| SCTWA40N120G2V-4 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 107A; 277W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 107A Power dissipation: 277W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |