SCTWA40N120G2V STMicroelectronics
Виробник: STMicroelectronics
Description: DISCRETE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V
Description: DISCRETE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 1mA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V
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Технічний опис SCTWA40N120G2V STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 1mA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V.
Інші пропозиції SCTWA40N120G2V
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SCTWA40N120G2V | Виробник : STMicroelectronics | SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package |
товару немає в наявності |
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| SCTWA40N120G2V | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 108A Power dissipation: 278W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |