SCTWA90N65G2V-4 STMicroelectronics
Виробник: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
| Кількість | Ціна |
|---|---|
| 1+ | 2019.92 грн |
| 10+ | 1517.53 грн |
| 100+ | 1217.87 грн |
| 600+ | 1093.86 грн |
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Технічний опис SCTWA90N65G2V-4 STMicroelectronics
Description: TRANS SJT N-CH 650V 119A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 119A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V, Power Dissipation (Max): 565W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: HiP247™ Long Leads, Part Status: Active, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V.
Інші пропозиції SCTWA90N65G2V-4
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SCTWA90N65G2V-4 | Виробник : STMicroelectronics |
Description: TRANS SJT N-CH 650V 119A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: HiP247™ Long Leads Part Status: Active Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V |
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