SDS065J006S3-ISBRH Luminus Devices Inc.
Виробник: Luminus Devices Inc.Description: DIODE 650V-6A DFN8*8-4L
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 18 µA @ 650 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис SDS065J006S3-ISBRH Luminus Devices Inc.
Description: DIODE 650V-6A DFN8*8-4L, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 310pF @ 0V, 1MHz, Current - Average Rectified (Io): 23A, Supplier Device Package: 4-DFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A, Current - Reverse Leakage @ Vr: 18 µA @ 650 V.
Інші пропозиції SDS065J006S3-ISBRH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
SDS065J006S3-ISBRH | Виробник : Luminus Devices Inc. |
Description: DIODE 650V-6A DFN8*8-4L Packaging: Cut Tape (CT) Package / Case: 4-PowerVSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 0V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 18 µA @ 650 V |
товар відсутній |