SDS065J012C3-ISATH Sanan Power Semiconductor

Description: DIODE SIL CARB 650V 37A TO220L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 651pF @ 0V, 1MHz, Current - Average Rectified (Io): 37A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A, Current - Reverse Leakage @ Vr: 36 µA @ 650 V.