SDS120J010H3-ISATH Sanan Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 443.17 грн |
| 10+ | 249.74 грн |
| 120+ | 179.46 грн |
| 510+ | 151.53 грн |
| 1020+ | 143.15 грн |
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Технічний опис SDS120J010H3-ISATH Sanan Semiconductor
Description: DIODE 1200V-10A TO247-2L, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2L, Current - Average Rectified (Io): 36A, Capacitance @ Vr, F: 780pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Інші пропозиції SDS120J010H3-ISATH за ціною від 391.17 грн до 483.91 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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SDS120J010H3-ISATH | Luminus Devices Inc. |
 Description: DIODE 1200V-10A TO247-2LCurrent - Reverse Leakage @ Vr: 30 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2L Current - Average Rectified (Io): 36A Capacitance @ Vr, F: 780pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
|
| SDS120J010H3-ISATH |
|
Виробник: Luminus Devices Inc.
Description: DIODE 1200V-10A TO247-2L
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2L
Current - Average Rectified (Io): 36A
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE 1200V-10A TO247-2L
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2L
Current - Average Rectified (Io): 36A
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 483.91 грн |
| 10+ | 391.17 грн |