SDS120J015C3-ISATH Sanan Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 530.34 грн |
| 10+ | 289.09 грн |
| 100+ | 229.73 грн |
| 500+ | 192.72 грн |
| 1000+ | 187.14 грн |
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Технічний опис SDS120J015C3-ISATH Sanan Semiconductor
Description: DIODE 1200V-15A TO220-2L, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 45 µA @ 1.2 kV, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2L, Current - Average Rectified (Io): 51A, Capacitance @ Vr, F: 1182pF @ 0V, 1MHz.
Інші пропозиції SDS120J015C3-ISATH
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SDS120J015C3-ISATH | Luminus Devices Inc. |
 Description: DIODE 1200V-15A TO220-2LTechnology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 45 µA @ 1.2 kV Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2L Current - Average Rectified (Io): 51A Capacitance @ Vr, F: 1182pF @ 0V, 1MHz |
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В кошику од. на суму грн. |
| SDS120J015C3-ISATH |
|
Виробник: Luminus Devices Inc.
Description: DIODE 1200V-15A TO220-2L
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 45 µA @ 1.2 kV
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 1182pF @ 0V, 1MHz
Description: DIODE 1200V-15A TO220-2L
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 45 µA @ 1.2 kV
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 1182pF @ 0V, 1MHz
товару немає в наявності
В кошику
од. на суму грн.