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Технічний опис SE100PWD-M3/I Vishay
Description: DIODE GEN PURP 200V 10A SLIMDPAK, Voltage - DC Reverse (Vr) (Max): 200 V, Reverse Recovery Time (trr): 2.6 µs, Current - Reverse Leakage @ Vr: 20 µA @ 200 V, Voltage Coupled to Current - Reverse Leakage @ Vr: 200, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SlimDPAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 78pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції SE100PWD-M3/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SE100PWD-M3/I | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 10A SLIMDPAKVoltage - DC Reverse (Vr) (Max): 200 V Reverse Recovery Time (trr): 2.6 µs Current - Reverse Leakage @ Vr: 20 µA @ 200 V Voltage Coupled to Current - Reverse Leakage @ Vr: 200 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SlimDPAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 78pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SE100PWD-M3/I | Виробник : Vishay General Semiconductor |
Rectifiers 10A, 200V, SlimDPAK |
товару немає в наявності |
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SE100PWD-M3/I | Виробник : Vishay Semiconductors |
Rectifiers 10A, 200V, SlimDPAK |
товару немає в наявності |
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SE100PWD-M3\I | Виробник : Vishay | Rectifiers 10A, 200V, SlimDPAK, STD SM RECT. |
товару немає в наявності |