SE20PAG-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.6A DO220AA
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
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Технічний опис SE20PAG-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.6A DO220AA, Technology: Standard, Reverse Recovery Time (trr): 1.2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-220AA, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-220AA (SMP), Current - Average Rectified (Io): 1.6A, Capacitance @ Vr, F: 13pF @ 4V, 1MHz.
Інші пропозиції SE20PAG-M3/I
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SE20PAG-M3/I | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1.6A DO220AA Packaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 1.6A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
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SE20PAG-M3/I | Виробник : Vishay Semiconductors |
Rectifiers 2A, 400V, ESD PROTECTION, SMPA |
товару немає в наявності |