SE30DT12HM3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 1.2KV 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Capacitance @ Vr, F: 132pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 148.74 грн |
| 10+ | 118.94 грн |
| 100+ | 94.66 грн |
| 500+ | 75.17 грн |
| 1000+ | 63.78 грн |
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Технічний опис SE30DT12HM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A SMPD, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.4 µs, Technology: Standard, Capacitance @ Vr, F: 132pF @ 4V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: SMPD, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Qualification: AEC-Q101.
Інші пропозиції SE30DT12HM3/I за ціною від 68.42 грн до 162.74 грн
| Фото | Назва | Виробник | Інформація |
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SE30DT12HM3/I | Виробник : Vishay Semiconductors |
Rectifiers 30A,1200V ESD PROTECTION, SMPD |
на замовлення 3188 шт: термін постачання 21-30 дні (днів) |
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SE30DT12HM3/I | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A SMPD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.4 µs Technology: Standard Capacitance @ Vr, F: 132pF @ 4V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Qualification: AEC-Q101 |
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