SE30NJ-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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Технічний опис SE30NJ-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DFN3820A, Packaging: Tape & Reel (TR), Package / Case: 2-VDFN, Mounting Type: Surface Mount, Wettable Flank, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 19pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DFN3820A, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101.
Інші пропозиції SE30NJ-M3/I за ціною від 7.92 грн до 35.20 грн
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SE30NJ-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DFN3820A Packaging: Cut Tape (CT) Package / Case: 2-VDFN Mounting Type: Surface Mount, Wettable Flank Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 19pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN3820A Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 14150 шт: термін постачання 21-31 дні (днів) |
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SE30NJ-M3/I | Vishay Semiconductors |
Rectifiers 3A, 600V, STD , SM RECT, DFN38 |
на замовлення 13705 шт: термін постачання 21-30 дні (днів) |
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| SE30NJ-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 14150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.17 грн |
| 12+ | 25.73 грн |
| 100+ | 15.44 грн |
| 500+ | 13.42 грн |
| 1000+ | 9.12 грн |
| 2000+ | 8.40 грн |
| 5000+ | 7.92 грн |
| SE30NJ-M3/I |
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Виробник: Vishay Semiconductors
Rectifiers 3A, 600V, STD , SM RECT, DFN38
Rectifiers 3A, 600V, STD , SM RECT, DFN38
на замовлення 13705 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 35.20 грн |
| 14+ | 23.34 грн |
| 100+ | 15.81 грн |
| 500+ | 12.01 грн |
| 1000+ | 9.04 грн |
| 2500+ | 8.97 грн |
| 5000+ | 8.42 грн |