SE30PAJ-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Технічний опис SE30PAJ-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 19pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.4A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції SE30PAJ-M3/I за ціною від 6.48 грн до 28.74 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE30PAJ-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.4A DO221BCPackaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 19pF @ 4V, 1MHz Current - Average Rectified (Io): 1.4A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 27914 шт: термін постачання 21-31 дні (днів) |
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| SE30PAJ-M3/I | Vishay Semiconductors |
Rectifiers 3A, 600V, ESD PROTECTION, SMPA |
на замовлення 13975 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SE30PAJ-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 1.4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 27914 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.74 грн |
| 17+ | 18.25 грн |
| 100+ | 12.32 грн |
| 500+ | 8.98 грн |
| 1000+ | 8.12 грн |
| 2000+ | 7.39 грн |
| 5000+ | 6.48 грн |
| SE30PAJ-M3/I |
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Виробник: Vishay Semiconductors
Rectifiers 3A, 600V, ESD PROTECTION, SMPA
Rectifiers 3A, 600V, ESD PROTECTION, SMPA
на замовлення 13975 шт:
термін постачання 21-30 дні (днів)


