SE40NJHM3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DFN3820A
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Packaging: Tape & Reel (TR)
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Технічний опис SE40NJHM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DFN3820A, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 24pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 2-VDFN, Packaging: Tape & Reel (TR).
Інші пропозиції SE40NJHM3/I за ціною від 8.49 грн до 38.10 грн
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SE40NJHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DFN3820A Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DFN3820A Current - Average Rectified (Io): 4A Capacitance @ Vr, F: 24pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN |
на замовлення 14300 шт: термін постачання 21-31 дні (днів) |
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SE40NJHM3/I | Vishay Semiconductors |
Rectifiers RECT 600V 4A SM STD RCOVR |
на замовлення 13563 шт: термін постачання 21-30 дні (днів) |
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| SE40NJHM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DFN3820A
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Description: DIODE GEN PURP 600V 4A DFN3820A
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DFN3820A
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
на замовлення 14300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.73 грн |
| 11+ | 29.54 грн |
| 100+ | 22.07 грн |
| 500+ | 16.27 грн |
| 1000+ | 12.57 грн |
| 2000+ | 11.51 грн |
| SE40NJHM3/I |
|
Виробник: Vishay Semiconductors
Rectifiers RECT 600V 4A SM STD RCOVR
Rectifiers RECT 600V 4A SM STD RCOVR
на замовлення 13563 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.10 грн |
| 13+ | 25.64 грн |
| 100+ | 19.74 грн |
| 500+ | 15.46 грн |
| 1000+ | 12.43 грн |
| 5000+ | 11.11 грн |
| 10000+ | 8.49 грн |