SEMIX202GB066HDS 27891110 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Case: SEMIX2S
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 0.6kV
Application: for UPS; Inverter; photovoltaics
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис SEMIX202GB066HDS 27891110 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Case: SEMIX2S, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Max. off-state voltage: 0.6kV, Application: for UPS; Inverter; photovoltaics, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX202GB066HDS 27891110
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX202GB066HDS 27891110 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge; thermistor Case: SEMIX2S Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Max. off-state voltage: 0.6kV Application: for UPS; Inverter; photovoltaics |
товару немає в наявності |