SEMIX703GB12M7P 27895801 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 700A
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 700A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Pulsed collector current: 1.4kA
Case: SEMiX® 3p
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис SEMIX703GB12M7P 27895801 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 700A, Mechanical mounting: screw, Electrical mounting: Press-Fit; screw, Topology: IGBT half-bridge; thermistor, Type of semiconductor module: IGBT, Application: for UPS; Inverter; photovoltaics, Gate-emitter voltage: ±20V, Collector current: 700A, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Pulsed collector current: 1.4kA, Case: SEMiX® 3p, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX703GB12M7P 27895801
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX703GB12M7P 27895801 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 700A Mechanical mounting: screw Electrical mounting: Press-Fit; screw Topology: IGBT half-bridge; thermistor Type of semiconductor module: IGBT Application: for UPS; Inverter; photovoltaics Gate-emitter voltage: ±20V Collector current: 700A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Pulsed collector current: 1.4kA Case: SEMiX® 3p |
товару немає в наявності |