SF1200-TAP Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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Технічний опис SF1200-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 1A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-57, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V.
Інші пропозиції SF1200-TAP за ціною від 14.82 грн до 52.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SF1200-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 3.4V Reverse recovery time: 75ns Leakage current: 50µA |
на замовлення 2585 шт: термін постачання 14-30 дні (днів) |
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SF1200-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 1A SOD57Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
на замовлення 9519 шт: термін постачання 21-31 дні (днів) |
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SF1200-TAP | Vishay Semiconductors |
Rectifiers 1.0 Amp 1200 Volt 30 Amp IFSM |
на замовлення 11200 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SF1200-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 3.4V
Reverse recovery time: 75ns
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 3.4V
Reverse recovery time: 75ns
Leakage current: 50µA
на замовлення 2585 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 49.67 грн |
| 14+ | 30.47 грн |
| 100+ | 21.58 грн |
| 250+ | 18.94 грн |
| 500+ | 17.13 грн |
| 1000+ | 15.57 грн |
| 2000+ | 14.82 грн |
| SF1200-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE STANDARD 1200V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 9519 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.34 грн |
| 10+ | 32.24 грн |
| 100+ | 25.79 грн |
| 500+ | 18.66 грн |
| 1000+ | 16.32 грн |
| 2000+ | 15.37 грн |
| SF1200-TAP |
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Виробник: Vishay Semiconductors
Rectifiers 1.0 Amp 1200 Volt 30 Amp IFSM
Rectifiers 1.0 Amp 1200 Volt 30 Amp IFSM
на замовлення 11200 шт:
термін постачання 21-30 дні (днів)



