SF2008PTH Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 20A TO247AD, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-247AD (TO-3P), Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 175pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.