SF63G R0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 150V 6A DO201AD, Current - Reverse Leakage @ Vr: 5 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A, Voltage - DC Reverse (Vr) (Max): 150 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 100pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Reel (TR).