Технічний опис SF65G A0G Taiwan Semiconductor
Description: DIODE GEN PURP 300V 6A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Current - Reverse Leakage @ Vr: 5 µA @ 300 V.
Інші пропозиції SF65G A0G
| Фото | Назва | Виробник | Інформація |
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SF65G A0G | Виробник : Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 300V 6A DO201ADPackaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
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SF65G A0G | Виробник : Taiwan Semiconductor |
Rectifiers 35ns, 6A, 300V, Super Fast Recovery Rectifier |
товару немає в наявності |