SFF2005GH TAIWAN SEMICONDUCTOR

Description: DIODE GEN PURP 300V 20A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 90pF @ 4V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: ITO-220AB, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 300 V, Qualification: AEC-Q101.