SFP9530

SFP9530 ON Semiconductor


3657566083817561sfp9530.pdf Виробник: ON Semiconductor
Trans MOSFET P-CH 100V 10.5A 3-Pin(3+Tab) TO-220 Tube
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Технічний опис SFP9530 ON Semiconductor

Description: MOSFET P-CH 100V 10.5A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 5.3A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V.

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SFP9530 Виробник : ONSEMI FAIRS20469-1.pdf?t.download=true&u=5oefqw Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3
Drain-source voltage: -100V
Drain current: -7.5A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
кількість в упаковці: 1 шт
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SFP9530 SFP9530 Виробник : Fairchild Semiconductor FAIRS20469-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 100V 10.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.3A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V
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SFP9530 SFP9530 Виробник : onsemi / Fairchild SFP9530_D-1814758.pdf MOSFET PCh/100V/1.5a/ .3Ohm
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SFP9530 Виробник : ONSEMI FAIRS20469-1.pdf?t.download=true&u=5oefqw Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3
Drain-source voltage: -100V
Drain current: -7.5A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
товар відсутній