SFT1450-H onsemi
Виробник: onsemiDescription: MOSFET N-CH 40V 21A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: IPAK/TP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V
на замовлення 18500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 833+ | 24.6 грн |
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Технічний опис SFT1450-H onsemi
Description: MOSFET N-CH 40V 21A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V, Power Dissipation (Max): 1W (Ta), 23W (Tc), Supplier Device Package: IPAK/TP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V.
Інші пропозиції SFT1450-H за ціною від 34.66 грн до 34.66 грн
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ | ||||
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SFT1450-H | Виробник : ONSEMI |
Description: ONSEMI - SFT1450-H - SFT1450-H, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 18500 шт: термін постачання 21-31 дні (днів) |
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SFT1450-H | Виробник : onsemi |
Description: MOSFET N-CH 40V 21A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V Power Dissipation (Max): 1W (Ta), 23W (Tc) Supplier Device Package: IPAK/TP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V |
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