Технічний опис SFU9024TU FSC
Description: P-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 3.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I-PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Інші пропозиції SFU9024TU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SFU9024TU | Виробник : ON Semiconductor |
 Trans MOSFET P-CH 60V 7.8A 3-Pin(3+Tab) IPAK Rail |
товар відсутній |
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SFU9024TU | Виробник : Fairchild Semiconductor |
Description: P-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.9A, 10V Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
товар відсутній |