SGB10N60AATMA1

SGB10N60AATMA1 Infineon Technologies


sgp_b_w10n60a_1.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 20A 92000mW 3-Pin(2+Tab) D2PAK T/R
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Технічний опис SGB10N60AATMA1 Infineon Technologies

Description: IGBT 600V 20A 92W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 28ns/178ns, Switching Energy: 320µJ, Test Condition: 400V, 10A, 25Ohm, 15V, Gate Charge: 52 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 92 W.

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SGB10N60AATMA1 SGB10N60AATMA1 Виробник : Infineon Technologies SGB10N60A.pdf Description: IGBT 600V 20A 92W TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 28ns/178ns
Switching Energy: 320µJ
Test Condition: 400V, 10A, 25Ohm, 15V
Gate Charge: 52 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 92 W
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SGB10N60AATMA1 Виробник : Infineon Technologies SGB10N60A.pdf IGBT Transistors IGBT PRODUCTS
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