SGH40N60UFDM1TU onsemi
Виробник: onsemi
Description: IGBT 600V 40A 160W TO3P
Part Status: Obsolete
Gate Charge: 97 nC
Test Condition: 300V, 20A, 10Ohm, 15V
Switching Energy: 160µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 15ns/65ns
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Power - Max: 160 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Відгуки про товар
Написати відгук
Технічний опис SGH40N60UFDM1TU onsemi
Description: IGBT 600V 40A 160W TO3P, Part Status: Obsolete, Gate Charge: 97 nC, Test Condition: 300V, 20A, 10Ohm, 15V, Switching Energy: 160µJ (on), 200µJ (off), Td (on/off) @ 25°C: 15ns/65ns, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A, Reverse Recovery Time (trr): 60 ns, Input Type: Standard, Power - Max: 160 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 40 A, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Інші пропозиції SGH40N60UFDM1TU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
SGH40N60UFDM1TU | Виробник : onsemi / Fairchild |
IGBT Transistors 600V/20A/WFRD |
товару немає в наявності |