SGI02N120XKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT NPT 1200V 6.2A TO262-3
Switching Energy: 220µJ
Td (on/off) @ 25°C: 23ns/260ns
IGBT Type: NPT
Supplier Device Package: PG-TO262-3-1
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Power - Max: 62 W
Current - Collector Pulsed (Icm): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 6.2 A
Part Status: Obsolete
Gate Charge: 11 nC
Test Condition: 800V, 2A, 91Ohm, 15V
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Технічний опис SGI02N120XKSA1 Infineon Technologies
Description: IGBT NPT 1200V 6.2A TO262-3, Switching Energy: 220µJ, Td (on/off) @ 25°C: 23ns/260ns, IGBT Type: NPT, Supplier Device Package: PG-TO262-3-1, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Power - Max: 62 W, Current - Collector Pulsed (Icm): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 6.2 A, Part Status: Obsolete, Gate Charge: 11 nC, Test Condition: 800V, 2A, 91Ohm, 15V.
Інші пропозиції SGI02N120XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SGI02N120XKSA1 | Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
товару немає в наявності |
В кошику од. на суму грн. |
| SGI02N120XKSA1 |
|
Виробник: Infineon Technologies
IGBT Transistors IGBT PRODUCTS
IGBT Transistors IGBT PRODUCTS
товару немає в наявності
В кошику
од. на суму грн.