Технічний опис SGI02N120XKSA1 Infineon Technologies
Description: IGBT 1200V 6.2A 62W TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A, Supplier Device Package: PG-TO262-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/260ns, Switching Energy: 220µJ, Test Condition: 800V, 2A, 91Ohm, 15V, Gate Charge: 11 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 6.2 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.6 A, Power - Max: 62 W.
Інші пропозиції SGI02N120XKSA1
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SGI02N120XKSA1 | Виробник : Infineon Technologies |
 Description: IGBT 1200V 6.2A 62W TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A Supplier Device Package: PG-TO262-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/260ns Switching Energy: 220µJ Test Condition: 800V, 2A, 91Ohm, 15V Gate Charge: 11 nC Part Status: Obsolete Current - Collector (Ic) (Max): 6.2 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9.6 A Power - Max: 62 W |
товару немає в наявності |
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| SGI02N120XKSA1 | Виробник : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
товару немає в наявності |