SGP23N60UFDTU onsemi
Виробник: onsemi
Description: IGBT 600V 23A 100W TO220
Power - Max: 100 W
Current - Collector Pulsed (Icm): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Gate Charge: 49 nC
Test Condition: 300V, 12A, 23Ohm, 15V
Switching Energy: 115µJ (on), 135µJ (off)
Td (on/off) @ 25°C: 17ns/60ns
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис SGP23N60UFDTU onsemi
Description: IGBT 600V 23A 100W TO220, Power - Max: 100 W, Current - Collector Pulsed (Icm): 92 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 23 A, Gate Charge: 49 nC, Test Condition: 300V, 12A, 23Ohm, 15V, Switching Energy: 115µJ (on), 135µJ (off), Td (on/off) @ 25°C: 17ns/60ns, Supplier Device Package: TO-220-3, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A, Reverse Recovery Time (trr): 60 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції SGP23N60UFDTU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
SGP23N60UFDTU | onsemi / Fairchild |
IGBT Transistors Dis High Perf IGBT |
товару немає в наявності |
В кошику од. на суму грн. |
| SGP23N60UFDTU |
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Виробник: onsemi / Fairchild
IGBT Transistors Dis High Perf IGBT
IGBT Transistors Dis High Perf IGBT
товару немає в наявності
В кошику
од. на суму грн.


