Продукція > ON SEMICONDUCTOR > SGP23N60UFDTU

SGP23N60UFDTU ON Semiconductor

Name: SGP23N60UFDTU
Brand: ONSEMI
SKU: 454029191-1
Price: 83.03 UAH
Availability: BackOrder

Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube

товар відсутній

Відгуки про товар

Написати відгук

Технічний опис SGP23N60UFDTU ON Semiconductor

Description: IGBT 600V 23A 100W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 17ns/60ns, Switching Energy: 115µJ (on), 135µJ (off), Test Condition: 300V, 12A, 23Ohm, 15V, Gate Charge: 49 nC, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 92 A, Power - Max: 100 W.

Інші пропозиції SGP23N60UFDTU

Назва	Виробник	Інформація	Доступність
SGP23N60UFDTU	Виробник : ONSEMI	Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 12A; 40W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 12A Power dissipation: 40W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 92A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт	товар відсутній
SGP23N60UFDTU	Виробник : onsemi	Description: IGBT 600V 23A 100W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 17ns/60ns Switching Energy: 115µJ (on), 135µJ (off) Test Condition: 300V, 12A, 23Ohm, 15V Gate Charge: 49 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W	товар відсутній
SGP23N60UFDTU	Виробник : onsemi / Fairchild	IGBT Transistors Dis High Perf IGBT	товар відсутній
SGP23N60UFDTU	Виробник : ONSEMI	Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 12A; 40W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 12A Power dissipation: 40W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 92A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode	товар відсутній