SGS10N60RUFDTU ON Semiconductor

Description: IGBT 600V 16A TO-220F-3, Power - Max: 55 W, Current - Collector Pulsed (Icm): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 16 A, Gate Charge: 30 nC, Test Condition: 300V, 10A, 20Ohm, 15V, Switching Energy: 141µJ (on), 215µJ (off), Td (on/off) @ 25°C: 15ns/36ns, Supplier Device Package: TO-220F-3, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A, Reverse Recovery Time (trr): 60 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.