SGT120R65AL STMicroelectronics
на замовлення 555 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 357.39 грн |
| 10+ | 296.37 грн |
| 25+ | 243.07 грн |
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Технічний опис SGT120R65AL STMicroelectronics
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 12mA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +6V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V.
Інші пропозиції SGT120R65AL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SGT120R65AL | Виробник : STMicroelectronics NV |
 N-Channel 650 V 15A (Tc) 192W (Tc) Surface Mount PowerFlat™ (5x6) HV |
на замовлення 2 шт: термін постачання 5 дні (днів) |
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| SGT120R65AL | Виробник : STMicroelectronics |
Trans MOSFET N-CH GaN 650V 15A 8-Pin Power Flat EP T/R |
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| SGT120R65AL | Виробник : STMicroelectronics |
Trans MOSFET N-CH GaN 650V 15A 8-Pin Power Flat EP T/R |
товар відсутній |
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| SGT120R65AL | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 9A Pulsed drain current: 36A Power dissipation: 192W Case: PowerFLAT 5x6 Gate-source voltage: -10...7V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 3nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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SGT120R65AL | Виробник : STMicroelectronics |
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 12mA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
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SGT120R65AL | Виробник : STMicroelectronics |
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 12mA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
товар відсутній |
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| SGT120R65AL | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 9A Pulsed drain current: 36A Power dissipation: 192W Case: PowerFLAT 5x6 Gate-source voltage: -10...7V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 3nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |