Технічний опис SGT120R65AL STM
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 12mA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +6V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V.
Інші пропозиції SGT120R65AL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SGT120R65AL | STMicroelectronics |
 Description: 650 V, 75 MOHM TYP., 15 A, E-MODPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 12mA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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SGT120R65AL | STMicroelectronics |
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 12mA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SGT120R65AL | STMicroelectronics |
GaN FETs 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| SGT120R65AL | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W Technology: GaN Case: PowerFLAT 5x6 Mounting: SMD Kind of package: tape On-state resistance: 0.12Ω Pulsed drain current: 36A Power dissipation: 192W Gate charge: 3nC Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 9A Kind of channel: enhancement Drain-source voltage: 650V Kind of transistor: HEMT Type of transistor: N-JFET Gate-source voltage: -10...7V |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
SGT120R65AL | STMicroelectronics |
Trans MOSFET N-CH GaN 650V 15A 8-Pin Power Flat EP T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SGT120R65AL |
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Виробник: STMicroelectronics
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 12mA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 12mA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SGT120R65AL |
|
Виробник: STMicroelectronics
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 12mA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 12mA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| SGT120R65AL |
|
Виробник: STMicroelectronics
GaN FETs 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
GaN FETs 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
товару немає в наявності
В кошику
од. на суму грн.
| SGT120R65AL |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Technology: GaN
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: tape
On-state resistance: 0.12Ω
Pulsed drain current: 36A
Power dissipation: 192W
Gate charge: 3nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Technology: GaN
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: tape
On-state resistance: 0.12Ω
Pulsed drain current: 36A
Power dissipation: 192W
Gate charge: 3nC
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
товару немає в наявності
В кошику
од. на суму грн.
| SGT120R65AL |
|
Виробник: STMicroelectronics
Trans MOSFET N-CH GaN 650V 15A 8-Pin Power Flat EP T/R
Trans MOSFET N-CH GaN 650V 15A 8-Pin Power Flat EP T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.