SGT65R65AL STMicroelectronics
на замовлення 2978 шт:
термін постачання 396-405 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 793.06 грн |
| 10+ | 538.92 грн |
| 100+ | 357.54 грн |
| 500+ | 322.23 грн |
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Технічний опис SGT65R65AL STMicroelectronics
Description: RF MOSFET GAN HEMT 400V PWRFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaN HEMT, FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 6V, Power Dissipation (Max): 5W (Ta), 305W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +6V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 286 pF @ 400 V, Current Rating (Amps): 25A, Configuration: N-Channel, Power - Output: 5W, Voltage - Rated: 650 V, Voltage - Test: 400 V.
Інші пропозиції SGT65R65AL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SGT65R65AL | Виробник : STMicroelectronics |
 Trans MOSFET N-CH GaN 650V 25A 8-Pin Power Flat EP T/R |
товару немає в наявності |
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| SGT65R65AL | Виробник : STMicroelectronics |
Trans MOSFET N-CH GaN 650V 25A 8-Pin Power Flat EP T/R |
товару немає в наявності |
||
| SGT65R65AL | Виробник : STMicroelectronics |
Trans MOSFET N-CH GaN 650V 25A 8-Pin Power Flat EP T/R |
товару немає в наявності |
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SGT65R65AL | Виробник : STMicroelectronics |
Description: RF MOSFET GAN HEMT 400V PWRFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 6V Power Dissipation (Max): 5W (Ta), 305W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 286 pF @ 400 V Current Rating (Amps): 25A Configuration: N-Channel Power - Output: 5W Voltage - Rated: 650 V Voltage - Test: 400 V |
товару немає в наявності |
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SGT65R65AL | Виробник : STMicroelectronics |
Description: RF MOSFET GAN HEMT 400V PWRFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 6V Power Dissipation (Max): 5W (Ta), 305W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 286 pF @ 400 V Current Rating (Amps): 25A Configuration: N-Channel Power - Output: 5W Voltage - Rated: 650 V Voltage - Test: 400 V |
товару немає в наявності |