SGT65R65AL STM

Description: RF MOSFET GAN HEMT 400V PWRFLAT, Voltage - Test: 400 V, Voltage - Rated: 650 V, Power - Output: 5W, Configuration: N-Channel, Current Rating (Amps): 25A, Input Capacitance (Ciss) (Max) @ Vds: 286 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +6V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V, Part Status: Active, Supplier Device Package: PowerFlat™ (5x6) HV, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Power Dissipation (Max): 5W (Ta), 305W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 6V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: P-Channel, Technology: GaN HEMT, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).