SH8K37GZETB Rohm Semiconductor

Description: MOSFET 2N-CH 60V 5.5A 8SOP, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 1.4W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.7V @ 100µA.