SH8KE6TB1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.58 грн |
| 10+ | 115.55 грн |
| 100+ | 92.86 грн |
| 500+ | 71.60 грн |
| 1000+ | 59.33 грн |
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Технічний опис SH8KE6TB1 Rohm Semiconductor
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 1.4W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SH8KE6TB1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
SH8KE6TB1 | Rohm Semiconductor |
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 1.4W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
SH8KE6TB1 | ROHM Semiconductor |
MOSFETs SOP8 100V 4.5A N-CH MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
| SH8KE6TB1 |
|
Виробник: Rohm Semiconductor
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SH8KE6TB1 |
|
Виробник: ROHM Semiconductor
MOSFETs SOP8 100V 4.5A N-CH MOSFET
MOSFETs SOP8 100V 4.5A N-CH MOSFET
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.