SH8M31GZETB Rohm Semiconductor

Description: MOSFET N/P-CH 60V 4.5A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).