SH8M4TB1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Технічний опис SH8M4TB1 Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 9A, 7A, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width).
Інші пропозиції SH8M4TB1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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SH8M4TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 9A/7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 7A Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SH8M4TB1 | ROHM Semiconductor |
MOSFET Nch+Pch 30V/-30V 9A/-7A; MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| SH8M4TB1 |
|
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
| SH8M4TB1 |
|
Виробник: ROHM Semiconductor
MOSFET Nch+Pch 30V/-30V 9A/-7A; MOSFET
MOSFET Nch+Pch 30V/-30V 9A/-7A; MOSFET
товару немає в наявності
В кошику
од. на суму грн.