SH8MC5TB1 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.05 грн |
| 10+ | 119.08 грн |
| 100+ | 70.41 грн |
| 500+ | 56.47 грн |
| 1000+ | 52.26 грн |
| 2500+ | 48.88 грн |
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Технічний опис SH8MC5TB1 ROHM Semiconductor
Description: ROHM - SH8MC5TB1 - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 6.5 A, 6.5 A, 0.032 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n- und p-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції SH8MC5TB1 за ціною від 56.47 грн до 193.30 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SH8MC5TB1 | Rohm Semiconductor |
 Description: MOSFET N/P-CH 60V 6.5A 8SOPPart Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, 50nC @ 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, 2630pF @ 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 591 шт: термін постачання 21-31 дні (днів) |
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SH8MC5TB1 | ROHM |
Description: ROHM - SH8MC5TB1 - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 6.5 A, 6.5 A, 0.032 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 1881 шт: термін постачання 21-31 дні (днів) |
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| SH8MC5TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 6.5A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, 2630pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 60V 6.5A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, 2630pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 591 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.39 грн |
| 10+ | 113.53 грн |
| 100+ | 76.60 грн |
| 500+ | 57.78 грн |
| SH8MC5TB1 |
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Виробник: ROHM
Description: ROHM - SH8MC5TB1 - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 6.5 A, 6.5 A, 0.032 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: ROHM - SH8MC5TB1 - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 6.5 A, 6.5 A, 0.032 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
на замовлення 1881 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 193.30 грн |
| 10+ | 124.84 грн |
| 100+ | 85.37 грн |
| 500+ | 63.49 грн |
| 1000+ | 56.47 грн |