SI030N04YQ-TP

SI030N04YQ-TP MCC (Micro Commercial Components)


Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 20 V
Qualification: AEC-Q101
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Технічний опис SI030N04YQ-TP MCC (Micro Commercial Components)

Description: N-CHANNEL MOSFET,SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.3A, 10V, Power Dissipation (Max): 1.3W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 20 V, Qualification: AEC-Q101.