Технічний опис SI1058X-T1-E3 Vishay
Description: MOSFET N-CH 20V 1.3A SC89-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 91mOhm @ 1.3A, 4.5V, Power Dissipation (Max): 236mW (Ta), Vgs(th) (Max) @ Id: 1.55V @ 250µA, Supplier Device Package: SC-89 (SOT-563F), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V.
Інші пропозиції SI1058X-T1-E3
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SI1058X-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 1.3A SC89-6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 1.3A, 4.5V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.55V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V |
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