Технічний опис SI2012KL3-TP Micro Commercial Components
Description: P-CHANNEL MOSFET,DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 980mA (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 400mA, 4.5V, Power Dissipation (Max): 740mW (Tj), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 10 V.
Інші пропозиції SI2012KL3-TP
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SI2012KL3-TP | Виробник : Micro Commercial Components |
 Small Signal MOSFETS |
товару немає в наявності |
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SI2012KL3-TP | Виробник : MCC (Micro Commercial Components) |
Description: P-CHANNEL MOSFET,DFN1006-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 980mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 400mA, 4.5V Power Dissipation (Max): 740mW (Tj) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 10 V |
товару немає в наявності |
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SI2012KL3-TP | Виробник : Micro Commercial Components (MCC) |
MOSFETs P-CHANNEL MOSFET,DFN1006-3 |
товару немає в наявності |