SI2101A-TP Micro Commercial Components (MCC)
| Кількість | Ціна |
|---|---|
| 12+ | 29.57 грн |
| 16+ | 20.80 грн |
| 100+ | 8.10 грн |
| 1000+ | 6.28 грн |
| 3000+ | 5.45 грн |
| 9000+ | 4.82 грн |
| 24000+ | 4.54 грн |
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Технічний опис SI2101A-TP Micro Commercial Components (MCC)
Description: P-CHANNEL MOSFET, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 450mW, Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції SI2101A-TP за ціною від 7.08 грн до 31.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI2101A-TP | MCC (Micro Commercial Components) |
 Description: P-CHANNEL MOSFETTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 450mW Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A FET Type: P-Channel |
на замовлення 1627 шт: термін постачання 21-31 дні (днів) |
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| SI2101A-TP |
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Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 450mW
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
FET Type: P-Channel
Description: P-CHANNEL MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 450mW
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
FET Type: P-Channel
на замовлення 1627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.42 грн |
| 17+ | 18.68 грн |
| 100+ | 8.90 грн |
| 500+ | 8.04 грн |
| 1000+ | 7.08 грн |