Технічний опис SI2301N-TP Micro Commercial Components
Description: P-CHANNEL MOSFET,SOT-23, Packaging: Tube, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 114mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 830mW (Tj), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 19 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 10 V.
Інші пропозиції SI2301N-TP
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SI2301N-TP | Виробник : MCC (Micro Commercial Components) |
 Description: P-CHANNEL MOSFET,SOT-23Packaging: Tube Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 114mOhm @ 1.5A, 4.5V Power Dissipation (Max): 830mW (Tj) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 19 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 10 V |
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