SI2302A-TP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 20V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.92 грн |
| 6000+ | 7.82 грн |
| 9000+ | 7.43 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
3000 шт
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Технічний опис SI2302A-TP MCC (Micro Commercial Components)
Description: MOSFET N-CH 20V 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tj), Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.25W, Vgs(th) (Max) @ Id: 1.2V @ 50µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V.
Інші пропозиції SI2302A-TP за ціною від 9.39 грн до 40.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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SI2302A-TP | MCC (Micro Commercial Components) |
Description: MOSFET N-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V |
на замовлення 12071 шт: термін постачання 21-31 дні (днів) |
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SI2302A-TP | MICRO COMMERCIAL COMPONENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 3A; Idm: 10A; 1.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 10A Technology: Trench |
на замовлення 4775 шт: термін постачання 14-30 дні (днів) |
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| SI2302A-TP |
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Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
Description: MOSFET N-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
на замовлення 12071 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.61 грн |
| 13+ | 23.48 грн |
| 100+ | 14.99 грн |
| 500+ | 10.60 грн |
| 1000+ | 9.48 грн |
| SI2302A-TP |
|
Виробник: MICRO COMMERCIAL COMPONENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 3A; Idm: 10A; 1.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: Trench
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 3A; Idm: 10A; 1.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: Trench
на замовлення 4775 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.63 грн |
| 18+ | 23.93 грн |
| 100+ | 15.04 грн |
| 500+ | 11.05 грн |
| 1000+ | 9.81 грн |
| 3000+ | 9.39 грн |