Технічний опис SI2305CHE3-TP Micro Computer Control
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 1.8V, Power Dissipation (Max): 1.3W, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V, Qualification: AEC-Q101.
Інші пропозиції SI2305CHE3-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SI2305CHE3-TP | MCC (Micro Commercial Components) |
 Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 1.8V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V Qualification: AEC-Q101 |
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В кошику од. на суму грн. |
 |
SI2305CHE3-TP | Micro Commercial Components (MCC) |
MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. |
| SI2305CHE3-TP |
|
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 1.8V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Qualification: AEC-Q101
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 1.8V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SI2305CHE3-TP |
|
Виробник: Micro Commercial Components (MCC)
MOSFETs
MOSFETs
товару немає в наявності
В кошику
од. на суму грн.