Технічний опис SI2310AHE3-TP Micro Commercial Components
Description: Interface, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V, Power Dissipation (Max): 1.2W, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SI2310AHE3-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI2310AHE3-TP | Виробник : Micro Commercial Components |
 Trans MOSFET N-CH 60V 3A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
товару немає в наявності |
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SI2310AHE3-TP | Виробник : MCC (Micro Commercial Components) |
Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 1.2W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| SI2310AHE3-TP | Виробник : Micro Commercial Components (MCC) |
MOSFETs N-CHANNEL MOSFET |
товару немає в наявності |