Технічний опис SI3134KWAS-TP Micro Commercial Components
Description: N-CHANNEL MOSFET,SOT-323S, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 690mA (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, Power Dissipation (Max): 220mW (Tj), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 470 µC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 10 V.
Інші пропозиції SI3134KWAS-TP
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SI3134KWAS-TP | Виробник : MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,SOT-323S Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 690mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 220mW (Tj) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 470 µC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 10 V |
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