SI3139KDWA-TP Micro Commercial Co
Виробник: Micro Commercial Co
Description: DUAL P CHANNEL MOSFET,SOT-363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 9+ | 37.27 грн |
| 12+ | 26.65 грн |
| 100+ | 15.11 грн |
| 500+ | 9.39 грн |
| 1000+ | 7.20 грн |
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Технічний опис SI3139KDWA-TP Micro Commercial Co
Description: DUAL P CHANNEL MOSFET,SOT-363, Current - Continuous Drain (Id) @ 25°C: 600mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 150mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V, Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V.
Інші пропозиції SI3139KDWA-TP
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
SI3139KDWA-TP | Micro Commercial Co |
Description: DUAL P CHANNEL MOSFET,SOT-363 Current - Continuous Drain (Id) @ 25°C: 600mA Drain to Source Voltage (Vdss): 20V Power - Max: 150mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SI3139KDWA-TP |
|
Виробник: Micro Commercial Co
Description: DUAL P CHANNEL MOSFET,SOT-363
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
Description: DUAL P CHANNEL MOSFET,SOT-363
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.