SI3407HE3-TP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)Description: P-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Qualification: AEC-Q101
на замовлення 901 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.55 грн |
| 17+ | 18.81 грн |
| 100+ | 11.90 грн |
| 500+ | 8.34 грн |
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Технічний опис SI3407HE3-TP MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V, Power Dissipation (Max): 1.3W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SI3407HE3-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SI3407HE3-TP | Виробник : Micro Commercial Components |
P-Channel MOSFET |
товару немає в наявності |
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SI3407HE3-TP | Виробник : MCC (Micro Commercial Components) |
Description: P-CHANNEL MOSFET,SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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SI3407HE3-TP | Виробник : Micro Commercial Components (MCC) |
MOSFET P-Channel MOSFET |
товару немає в наявності |